Database of Photocharged Materials

Material photocharging is a process in which electrons are accumulated in a semiconductor upon band gap excitation followed by quenching of the photogenerated holes by reductants. Negative charge induced by accumulation of electrons is compensated by small positively charged ions, among which the most ubiquitous is H⁺. Semiconductors photocharged with electrons have been studied since 1980^th, but rediscovered recently in the context of PCET reactions for reduction of organic substrates in dark and using them as components of solar batteries. Forty years of research resulted in rich experimental data.

The database provides a summary of the following parameters of photocharged semiconductors:

• Specific concentration of electrons stored in 1 gram of a semiconductor (δ, mol[e^‒] g^-1)
• Average number of electrons stored per semiconductor particle (<n>)
• Initial rate of photocharging (R_PC, mol[e^‒] g^-1 s^-1)
• Initial rate of discharging (R_DC, mol[e^‒] g^-1 s^-1)

The database provides analysis of dependence of these parameters on the following materials characteristics:

• Specific surface area (S_SA, m² g^-1)
• Particle volume (V_P, nm³)

as well as photocharging process parameters:

• type of electron donor, for example, ethanol versus Li[Et₃BH]
• concentration of electron donor (C_ED, mol L^-1)
• type of counter ion, such as H⁺ versus Li⁺

and discharging of semiconductors in dark:

• type of electron acceptor, for example, O₂ versus TEMPO
• concentration of electron acceptor (C_EA, mol L^-1)

To explore the database using interactive Tableu Public vizzes click on the version link below.

How to cite:

Savateev, O., Photocharging of Semiconductor Materials: Database, Quantitative Data
Analysis, and Application in Organic Synthesis. Adv. Energy Mater. 2022, 12, 2200352.
https://doi.org/10.1002/aenm.202200352

Photocharging

Dependence of R_PC on C_ED (v 2.1)

Dependence of R_PC on S_SA (v 2.1)

Electron storage

Dependence of δ on V_p (v 2.1)

Dependence of <n> on V_P (v 2.1)

Dependence of R_PC on δ (v 2.1)

Discharging of SCP(e^‒/X⁺) in dark

Dependence of R_DC on V_p (v 2.1)

Dependence of R_DC on δ (v 2.1)

Dependence of R_DC on C_EA (v 2.1)

Previous versions

Photocharging

Dependence of R_PC on C_ED (v 1.1)

Dependence of R_PC on S_SA (v 1.1)

Electron storage

Dependence of δ on V_p (v 1.1)

Dependence of <n> on V_P (v 1.1)

Dependence of R_PC on δ (v 1.1)

Discharging of SCP(e^‒/X⁺) in dark

Dependence of R_DC on V_p (v 1.1)

Dependence of R_DC on δ (v 1.1)

Dependence of R_DC on C_EA (v 1.1)